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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -1A) *Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA) B APPLICATIONS *High power switching applications. *Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE -100 V -100 -7 V V -2 -3 -0.5 2 W 20 150 -55~150 A A A UNIT .cn mi e Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Tstg Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1411 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -2mA B -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA B -2.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -1A; IB= -2mA B -2.2 V A Collector Cutoff Current VCB= -100V; IE= 0 -100 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain Switching Times ton tstg tf Turn-on Time Storage Time ww w scs .i IC= -1A; VCE= -3V IC= -2A; VCE= -3V .cn mi e 1500 1000 1.0 3.0 2.0 -2.5 mA 15000 s s s IC= -1A, IB1= -IB2= -2mA, VCC -30V; RL= 30 Fall Time isc Websitewww.iscsemi.cn 2 |
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